Tuesday 10 June 2025
Scientists have made a significant breakthrough in understanding the properties of magnetic materials, which could lead to the development of new electronic devices and technologies. In recent years, researchers have been studying the behavior of topological insulators, which are materials that conduct electricity on their surface but are insulators in their interior.
In a new study, scientists have discovered a way to create a topological phase transition in a narrow-gap semiconductor by using magnetic proximity effect (MPE). This phase transition allows for the creation of a topological surface state (TSS), which is a unique electronic state that is protected by time-reversal symmetry and spatial inversion symmetry.
The MPE occurs when two materials with different magnetic properties are brought together, such as a ferromagnetic material and a non-magnetic material. In this case, the researchers used a heterostructure consisting of a few nanometers thick layer of FeOx, a ferromagnetic material, on top of an 18-millimeter thick layer of α-Sn, a narrow-gap semiconductor.
The researchers found that when they applied a magnetic field to the heterostructure, it caused a phase transition in the α-Sn layer, resulting in the creation of a TSS. This TSS is characterized by its linear dispersion and high quantum mobility, making it an ideal material for electronic devices such as transistors and diodes.
The researchers also found that the MPE was responsible for the hybridization between s, p, and d orbitals in the α-Sn layer, which led to the creation of a topological surface state. This hybridization is important because it allows the TSS to be stabilized even when the magnetic field is removed.
One of the most exciting aspects of this discovery is its potential application in the development of new electronic devices. For example, the TSS could be used as a source of quantum computing power or as a component in advanced sensors. The researchers believe that their findings could lead to the creation of new materials and devices with unique electronic properties.
In addition to its potential applications, this discovery also sheds light on the fundamental physics behind topological insulators. It shows that MPE can be used to control the behavior of these materials, which could lead to a deeper understanding of their properties and behavior.
Overall, this breakthrough has significant implications for the development of new electronic devices and technologies.
Cite this article: “Unlocking Topological Quantum Properties in Magnetic Materials”, The Science Archive, 2025.
Topological Insulators, Magnetic Proximity Effect, Ferromagnetic Material, Semiconductor, Heterostructure, Phase Transition, Topological Surface State, Quantum Mobility, Orbital Hybridization, Electronic Devices.
